The Molecular Beam Epitaxy (MBE) System is used to grow
semiconductors from group II (Zn, Mg) and group VI (Te, O)
elemental sources in an ultrahigh vacuum environment. Dopants
include (N, B, Ga, In, and As). The system has six solid
source effusion cells and 2 RF plasma gas sources. This
enables semiconductors, simple and complex heterostructures and
nanostructures with appropriate dopants to be prepared.