The Elionix ELS-G100 electron beam lithography system produces a highly stable beam with a diameter as small 1.8nm, using acceleration voltages of up to 100kV and high beam currents. This allows fine patterns to be drawn with a line width of 6nm or less. The tool allows fine patterns to be written over a wide range. It’s high-rigidity stage enables beam positioning resolution of 0.1nm. A laser interferometer provides optical resolution of 0.3nm, achieving a stitching precision of +/- 15nm, with overlay precision on +/-20nm in a 100µm field.
Electrical Engineering Cleanroom
Davis Hall, Suite 114
University at Buffalo North Campus
Buffalo, NY 14260
Dr. Yueling Qin
Dr. Viswas Purohit