The Trion Phantom III dry etcher is designed to supply state-of-the-art plasma etch capability for single wafers, dies or parts using fluorine and oxygen based chemistries. It features both RIE and ICP RF sources.
• Process gases (4 MFCs): CF4, CHF3, O2 and Ar
• Able to etch photoresist, SiO2, Si3N4, Si, Ti-W and other organic materials
• Able to process in both RIE (bottom of the reactor) and/or ICP (top of the reactor) modes
• RIE and ICP sources: 600 W, 13.56 MHz RF generators
• Sample size: 2" to 200 mm single wafers, dies or parts
• Automatic pressure control
• Touch screen interface and PC process controller enable easy operation
Electrical Engineering Cleanroom
Davis Hall, Suite 114
University at Buffalo North Campus
Buffalo, NY 14260
Donald J. Goralski
Director, Shared Instrumentation Laboratories
(716) 645-5151
For technical inquiries, contact:
David Eason, PhD
Assistant Professor of Research
Department of Electrical Engineering and Materials Design and Innovation
Technical Director, Shared Instrumentation Laboratories (SIL)
114A Davis Hall
716-645-8496