Etching

Etcher - Inductively Coupled Plasma Reactive Ion (ICP-RIE) - Trion Technology Phantom III

The Trion Phantom III dry etcher is designed to supply state-of-the-art plasma etch capability for single wafers, dies or parts using fluorine and oxygen based chemistries. It features both RIE and ICP RF sources.

Features

• Process gases (4 MFCs): CF4, CHF3, O2 and Ar
• Able to etch photoresist, SiO2, Si3N4, Si, Ti-W and other organic materials
• Able to process in both RIE (bottom of the reactor) and/or ICP (top of the reactor) modes
• RIE and ICP sources: 600 W, 13.56 MHz RF generators
• Sample size: 2" to 200 mm single wafers, dies or parts
• Automatic pressure control
• Touch screen interface and PC process controller enable easy operation

Location

Electrical Engineering Cleanroom
Davis Hall, Suite 114
University at Buffalo North Campus
Buffalo, NY 14260

Fees

  • Internal Academic: $25
  • External Academic: $25
  • Industry: $100
Learn more about our rates
Etcher - Inductively Coupled Plasma Reactive Ion (ICP-RIE) - Trion Technology Phantom III.

Etcher - Inductively Coupled Plasma Reactive Ion (ICP-RIE) - Trion Technology Phantom III

Standard Operating Procedure: Trion Phantom III ICP-RIE Dry Etcher
For general inquiries, contact:

Donald J. Goralski
Director, Shared Instrumentation Laboratories
(716) 645-5151

For technical inquiries, contact:
 David Eason, PhD
Assistant Professor of Research
Department of Electrical Engineering and Materials Design and Innovation
Technical Director, Shared Instrumentation Laboratories (SIL)
114A Davis Hall
716-645-8496