Fei Yao

PhD

Fei Yao.

Fei Yao

PhD

Fei Yao

PhD

Research Topics

Nanomaterials and nanostructures for energy storage and conversion

Biography Publications Teaching Research Latest News

Latest News

  • Predicting band gap with neural networks
    2/18/25

    Semiconductor Engineering quoted Huamin Li in an article about research, co-led by Li and Fei Yao through UB’s Center for Advanced Semiconductor Technologies, that is working on mixing silicon with 2D materials to create energy-efficient semiconductor technology. 

  • UB researchers mix silicon with 2D materials for new semiconductor tech
    2/4/25

    Silicon Semiconductor quoted Huamin Li and Fei Yao in an article about a study in UB’s Center for Advanced Semiconductor Technologies that is working on mixing silicon with 2D materials to create energy-efficient semiconductor technology.

  • Mixing silicon with 2D materials for new energy-efficient semiconductor tech
    1/23/25

    Phys.org reported on a study in UB’s Center for Advanced Semiconductor Technologies that is working on mixing silicon with 2D materials to create energy-efficient semiconductor technology.

  • UB receives $2.4 million grant to develop Earth’s thinnest materials for space tech
    11/8/23

    The team will use AI and quantum science to apply 2D materials to satellite sensors, radiation shields and quantum computing.

  • A look back at UB engineering and applied science research in 2022
    1/6/23

    Highlights include making hydrogen fuel cell less expensive and keeping bridges open after earthquakes.

  • Study: New electrocatalyst offers hope for less expensive hydrogen fuel
    6/3/22

    It could reduce industry’s reliance on expensive platinum, which has hindered the growth of fuel cell electric vehicles, green power generation and more.

  • Atoms-thick transistors get faster using less power
    12/23/20
    IEEE Spectrum interviews Huamin Li, assistant professor of electrical engineering, about new transistor technology. The article reports that by combining graphene and molybdenum disulfide, researchers have made a transistor that operates at half the voltage and has a higher current density than any state-of-the-art 2D transistor previously under development.