Molecular Beam Epitaxy (MBE) System

The Molecular Beam Epitaxy (MBE) System is used to grow semiconductors from group II (Zn, Mg) and group VI (Te, O) elemental sources in an ultrahigh vacuum environment. Dopants include (N, B, Ga, In, and As).  The system has six solid source effusion cells and 2 RF plasma gas sources.  This enables semiconductors, simple and complex heterostructures and nanostructures with appropriate dopants to be prepared.


  • Growth can be monitored in-situ by RHEED (reflection high energy electron diffraction)
  • 3-inch maximum substrate diameter
  • Extensive computer control of temperatures and programmable shutter control
  • Extensive cryoshrouding internal to the chamber
  • 1 x 10 -10 Torr System base pressure with cryopump with an ion pump option


Electrical Engineering Cleanroom
Davis Hall, Suite 114
University at Buffalo North Campus
Buffalo, NY 14260


Usage Fee: $25/hour (academic), $100/hour (industry)

Molecular Beam Epitaxy (MBE) System

Molecular Beam Epitaxy (MBE) System

For general inquiries, contact:

Donald J. Goralski

Director, Shared Instrumentation Laboratories

(716) 645-5151


For technical inquiries, contact:

David Eason, PhD

Technical Director, Shared Instrumentation Laboratories

(716) 645-8496