The Molecular Beam Epitaxy (MBE) System is used to grow semiconductors from group II (Zn, Mg) and group VI (Te, O) elemental sources in an ultrahigh vacuum environment. Dopants include (N, B, Ga, In, and As). The system has six solid source effusion cells and 2 RF plasma gas sources. This enables semiconductors, simple and complex heterostructures and nanostructures with appropriate dopants to be prepared.
Usage Fee: $25/hour (academic), $100/hour (industry)