Molecular Beam Epitaxy (MBE) System

The Molecular Beam Epitaxy (MBE) System is used to grow semiconductors from group II (Zn, Mg) and group VI (Te, O) elemental sources in an ultrahigh vacuum environment. Dopants include (N, B, Ga, In, and As).  The system has six solid source effusion cells and 2 RF plasma gas sources.  This enables semiconductors, simple and complex heterostructures and nanostructures with appropriate dopants to be prepared.


  • Growth can be monitored in-situ by RHEED (reflection high energy electron diffraction)
  • 3-inch maximum substrate diameter
  • Extensive computer control of temperatures and programmable shutter control
  • Extensive cryoshrouding internal to the chamber
  • 1 x 10 -10 Torr System base pressure with cryopump with an ion pump option


Electrical Engineering Cleanroom
Davis Hall, Suite 114
University at Buffalo North Campus
Buffalo, NY 14260


  • Internal Academic: $25
  • External Academic: $25
  • Industry: $100
Molecular Beam Epitaxy (MBE) System.

Molecular Beam Epitaxy (MBE) System

For general inquiries, contact:

Donald J. Goralski
Director, Shared Instrumentation Laboratories
(716) 645-5151

For technical inquiries, contact:
David Eason, PhD
Assistant Professor of Research
Department of Electrical Engineering and Materials Design and Innovation
Technical Director, Shared Instrumentation Laboratories (SIL)
114A Davis Hall