Deposition

Molecular Beam Epitaxy (MBE) System

The Molecular Beam Epitaxy (MBE) System is used to grow semiconductors from group II (Zn, Mg) and group VI (Te, O) elemental sources in an ultrahigh vacuum environment. Dopants include (N, B, Ga, In, and As).  The system has six solid source effusion cells and 2 RF plasma gas sources.  This enables semiconductors, simple and complex heterostructures and nanostructures with appropriate dopants to be prepared.

Features

  • Growth can be monitored in-situ by RHEED (reflection high energy electron diffraction)
  • 3-inch maximum substrate diameter
  • Extensive computer control of temperatures and programmable shutter control
  • Extensive cryo-shrouding internal to the chamber
  • 1 x 10 -10 Torr System base pressure with cryopump with an ion pump option

Location

Electrical Engineering Cleanroom
Davis Hall, Suite 114
University at Buffalo North Campus
Buffalo, NY 14260

Fees

  • Internal Academic: $25
  • External Academic: $25
  • Industry: $100
Learn more about our rates
Zoom image: Molecular Beam Epitaxy (MBE) System Molecular Beam Epitaxy (MBE) System

Molecular Beam Epitaxy (MBE) System

For general inquiries, contact:

Donald J. Goralski
Director, Shared Instrumentation Laboratories
(716) 645-5151