Innovative approach to integrate two dissimilar wide bandgap semiconductors toward efficient energy conversion device

Chart displaying Output power (W) and Operation frequency (Hz).

The wide bandgap semiconductors have the potential for having better power conversion efficiency and higher current handling capability.

The wide bandgap semiconductors have the potential for having better power conversion efficiency and higher current handling capability. Among various wide bandgap semiconductors, β-Ga2O has the thermodynamically stable phase with a large bandgap and high electron mobility which makes it an attractive semiconductor for next-generation power electronics and optoelectronics. Despite promising material property of β-Ga2O3, the well-known deficiency of β-Ga2O, namely, the lack of efficient p-type dopant largely prohibits the use of β-Ga2Otoward wider spectrum power electronics. The goal of this project is to address the unipolar doping challenge of n-type β-Ga2Oby a revolutionary heterogeneous integration method using p-type single crystalline diamond and n-type β-Ga2O3, which alllows us to bond two dissimilar semiconductors without restricted by lattice constants. To investigate the quality of the heterostructure, the state-of-the-art, laser-assisted atom probe tomography will be used, which will provide the details of interfacial properties such as defects, abruptness, roughness, elemental diffusion. The interdisciplinary team of researchers will:

1. Provide a comprehensive solution to develop a completely new class of highly efficient high power switches which will lead to greatly enhanced switching performance metrics over that of today's power electronics.

2. Apply to all of the wide bandgap semiconductors which suffer from unbalanced material properties. Therefore, the outcome of the proposed research has the potential to spur transformative technologies that will broadly affect daily life in the areas on electronics, optoelectronics, and solar energy harvesting.

3. Finally, allow us to develop the new class of ultra wide bandgap high power insulated-gate heterjunction bipolar transistors (IGhBTs) based on the multiple p-n junctions using p-type diamond nanomembrane and n-tpre β-Ga2Onanomembrane.

The project's principal investigators is Jung-Hun Seo, PhD, assistant professor in the Department of Materials Design and Innovation. Co-principal investigators are Uttam Singisetti, PhD, associate professor in the Department of Electrical Engineering, and Baishakhi Mazumder, PhD, assistant professor in the Department of Materials Design and Innovation.