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University at Buffalo

UB Undergraduate Academic Schedule: Fall 2020


This information is updated nightly. Additional information about this course, including real-time course data, prerequisite and corequisite information, is available to current students via the HUB Student Center, which is accessible via MyUB.


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EE 488LEC - Funds Of Mod Vlsi Devices
Lecture
Funds Of Mod Vlsi Devices 000 Enrollment Information (not real time - data refreshed nightly)
Class #:   20389   Enrollment Capacity:   10
Section:   000   Enrollment Total:   9
Credits:   3.00 credits   Seats Available:   1
Dates:   08/31/2020 - 12/11/2020   Status:   OPEN
Days, Time:   M W , 11:10 AM - 12:25 PM
Room:   Remote view map
Location:   Remote      
Enrollment Requirements
Prerequisites: Pre-Requisite: EE 311; Approved Engineering Majors or EE Minors Only;Senior Standing.
  Course Description
Device fundamentals of deep submicron and nano-scale CMOS and BiCMOS circuits. Device parameters and performance factors are covered that are important for VLSI devices of deep-submicron dimensions. The course first reviews silicon materials properties, basic physics of p-n junctions and MOS capacitors, and fundamental principles of MOSFET and bipolar transistors. Then we discuss the design and optimization of MOSFET and bipolar devices for VLSI applications, interdependency and tradeoffs of device parameters pertaining to circuit performance and manufacturability. Covered are short-channel effects, controlling the scaling parameter by vertical and lateral impurity doping profile, and scaling into the nano-dimensions for future VLSI. We also discuss effects in small-dimension devices: quantization in surface inversion layer in a MOSFET device, discrete dopant effects due to small device volume, etc.
  Instructor(s)
             Wie, C look up    
  On-line Resources
Other Courses Taught By: Wie, C