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University at Buffalo

UB Graduate Academic Schedule: Fall 2020

This information is updated nightly. Additional information about this course, including real-time course data, prerequisite and corequisite information, is available to current students via the HUB Student Center, which is accessible via MyUB.


EE 588LEC - Funds Of Mod Vlsi Devices
Funds Of Mod Vlsi Devices 000 Enrollment Information (not real time - data refreshed nightly)
Class #:   20390   Enrollment Capacity:   18
Section:   000   Enrollment Total:   5
Credits:   3.00 credits   Seats Available:   13
Dates:   08/31/2020 - 12/11/2020   Status:   OPEN
Days, Time:   M W , 11:10 AM - 12:25 PM
Room:   Remote view map
Location:   Remote      
  Course Description
Device fundamentals of CMOS field effect transistors and BiCMOS bipolar transistors. Device parameters and performance factors important for VLSI devices of deep-submicron dimensions. Reviews silicon materials properties, basic physics of p-n junctions and MOS capacitors, and fundamental principles of MOSFET and bipolar transistors. Design and optimization of MOSFET and bipolar devices for VLSI applications. Discusses interdependency and tradeoffs of device parameters pertaining to circuit performance and manufacturability. Also discusses effects in small-dimension devices: quantization in surface inversion layer in a MOSFET device, heavy-doping effect in the bipolar transistor, etc.
             Wie, C look up    
  On-line Resources
Other Courses Taught By: Wie, C