A University at Buffalo research paper highlighting a new method to generate energy from 2D semiconductors while maintaining or enhancing ubiquitous semiconductor technology earned Editor’s Pick in the Journal of Vacuum Science & Technology B.
Electrical and electronics engineering research from universities across the U.S. shared their findings and celebrated some of the most significant achievements in electrical engineering during a three-day symposium on UB’s campus, last month.
It could reduce industry’s reliance on expensive platinum, which has hindered the growth of fuel cell electric vehicles, green power generation and more.
IEEE Spectrum quoted Huamin Li, assistant professor of electrical engineering, in a story about a transistor with a record-breaking gate length of just roughly one-third of a nanometer wide, only as thick as a single layer of carbon atoms, shedding light on how much smaller transistors can possibly get.
IEEE Spectrum interviews Huamin Li, assistant professor of electrical engineering, about new transistor technology. The article reports that by combining graphene and molybdenum disulfide, researchers have made a transistor that operates at half the voltage and has a higher current density than any state-of-the-art 2D transistor previously under development.
