The Molecular Beam Epitaxy (MBE) System is used to grow semiconductors from group II (Zn, Mg) and group VI (Te, O) elemental sources in an ultrahigh vacuum environment. Dopants include (N, B, Ga, In, and As). The system has six solid source effusion cells and 2 RF plasma gas sources. This enables semiconductors, simple and complex heterostructures and nanostructures with appropriate dopants to be prepared.
Electrical Engineering Cleanroom
Davis Hall, Suite 114
University at Buffalo North Campus
Buffalo, NY 14260
Donald J. Goralski
Director, Shared Instrumentation Laboratories
(716) 645-5151
For technical inquiries, contact:
David Eason, PhD
Assistant Professor of Research
Department of Electrical Engineering and Materials Design and Innovation
Technical Director, Shared Instrumentation Laboratories (SIL)
114A Davis Hall
716-645-8496