Renewable energy sources such as wind and solar are expected to be integrated into the future electric grid for economic, energy and environmental security.
At the heart of power electronics is a transistor, which is a switch that regulates the power flow. Energy is lost during this process. The power transistor needs to be efficient. The present technology based on silicon has reached its limits. Emerging ultra-wide bandgap semiconductor gallium oxide (GaO) is predicted to significantly increase the efficiency of power electronics beyond the capability of silicon. This program aims to achieve this by:
· Investigating the fundamental materials properties of the GaO semiconductor and developing doping technologies.
· Carrying out theoretical studies of the physics of doping.
· Building upon the knowledge and understanding gained from these studies, next generation power transistors will be fabricated.
The project’s principal investigator is Uttam Singisetti, PhD, assistant professor in the Department of Electrical Engineering. Co-principal investigators are Joseph A. Gardella, PhD, SUNY Distinguished Professor and Frances Larkin Professor of Chemistry at UB, and Peihong Zhang, PhD, associate professor in the Department of Physics.