University at Buffalo

UB Graduate Academic Schedule: Fall 2017


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    EE 588LEC - Funds Of Mod Vlsi Devices
    Lecture
    Funds Of Mod Vlsi Devices 000 Enrollment Information (not real time - data refreshed nightly)
    Class #:   24273   Enrollment Capacity:   19
    Section:   000   Enrollment Total:   21
    Credits:   3.00 credits   Seats Available:   0
    Dates:   08/28/2017 - 12/08/2017   Status:   CLOSED
    Days, Time:   M W , 11:00 AM - 12:20 PM
    Room:   Clemen 204 view map
    Location:   North Campus      
      Course Description
    Device fundamentals of CMOS field effect transistors and BiCMOS bipolar transistors. Device parameters and performance factors important for VLSI devices of deep-submicron dimensions. Reviews silicon materials properties, basic physics of p-n junctions and MOS capacitors, and fundamental principles of MOSFET and bipolar transistors. Design and optimization of MOSFET and bipolar devices for VLSI applications. Discusses interdependency and tradeoffs of device parameters pertaining to circuit performance and manufacturability. Also discusses effects in small-dimension devices: quantization in surface inversion layer in a MOSFET device, heavy-doping effect in the bipolar transistor, etc.
      Instructor(s)
                 Wie, C look up    
      On-line Resources
    Other Courses Taught By: Wie, C