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UB Graduate Academic Schedule: Fall 2019

  • This information is updated nightly. Additional information about this course, including real-time course data, prerequisite and corequisite information, is available to current students via the HUB Student Center, which is accessible via MyUB. Information about HUB can be found at

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    EE 588LEC - Funds Of Mod Vlsi Devices
    Funds Of Mod Vlsi Devices 000 Enrollment Information (not real time - data refreshed nightly)
    Class #:   21241   Enrollment Capacity:   18
    Section:   000   Enrollment Total:   5
    Credits:   3.00 credits   Seats Available:   13
    Dates:   08/26/2019 - 12/06/2019   Status:   OPEN
    Days, Time:   M W , 11:00 AM - 12:20 PM
    Room:   Frnczk 454 view map
    Location:   North Campus      
      Course Description
    Device fundamentals of CMOS field effect transistors and BiCMOS bipolar transistors. Device parameters and performance factors important for VLSI devices of deep-submicron dimensions. Reviews silicon materials properties, basic physics of p-n junctions and MOS capacitors, and fundamental principles of MOSFET and bipolar transistors. Design and optimization of MOSFET and bipolar devices for VLSI applications. Discusses interdependency and tradeoffs of device parameters pertaining to circuit performance and manufacturability. Also discusses effects in small-dimension devices: quantization in surface inversion layer in a MOSFET device, heavy-doping effect in the bipolar transistor, etc.
                 Wie, C look up    
      On-line Resources
    Other Courses Taught By: Wie, C